vishay siliconix sum110n04-04 document number: 72077 s-80108-rev. e, 21-jan-08 www.vishay.com 1 n-channel 40-v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature product summary v (br)dss (v) r ds(on) ( )i d (a) 40 0.0035 at v gs = 10 v 110 a to-263 s d g top view ordering information: sum110n04-04 SUM110N04-04-E3 (lead (pb)-free) n-channel mosfet g d s notes: a. package limited. b. duty cycle 1 %. c. see soa curve for voltage derating. d. when mounted on 1" square pcb (fr-4 material). * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 110 a a t c = 125 c 107 a pulsed drain current i dm 350 avalanche current i ar 60 repetitive avalanche energy b l = 0.1 mh e ar 180 mj maximum power dissipation b t c = 25 c p d 250 c w t a = 25 c d 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) d r thja 40 c/w junction-to-case r thjc 0.6 a v aila b le rohs* compliant
www.vishay.com 2 document number: 72077 s-80108-rev. e, 21-jan-08 vishay siliconix sum110n04-04 notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 40 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 24 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 125 c 50 v ds = 40 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a 0.0028 0.0035 v gs = 10 v, i d = 30 a, t j = 125 c 0.0055 v gs = 10 v, i d = 30 a, t j = 175 c 0.006 forward transconductance a g fs v ds = 15 v, i d = 30 a 30 s dynamic b input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 6800 pf output capacitance c oss 1110 reverse transfer capacitance c rss 690 total gate charge c q g v ds = 30 v, v gs = 10 v, i d = 110 a 140 200 nc gate-source charge c q gs 35 gate-drain charge c q gd 55 tu r n - o n d e l ay t i m e c t d(on) v dd = 30 v, r l = 0.47 i d ? 110 a, v gen = 10 v, r g = 2.5 20 35 ns rise time c t r 115 175 turn-off delay time c t d(off) 75 115 fall time c t f 85 130 source-drain diode ratings and characteristics t c = 25 c b continuous current i s 110 a pulsed current i sm 350 forward voltage a v sd i f = 110 a, v gs = 0 v 1.1 1.4 v reverse recovery time t rr i f = 110 a, di/dt = 100 a/s 50 80 ns peak reverse recovery current i rm(rec) 23a reverse recovery charge q rr 0.05 0.12 c
document number: 72077 s-80108-rev. e, 21-jan-08 www.vishay.com 3 vishay siliconix sum110n04-04 typical characteristics 25 c, unless otherwise noted output characteristics transconductance capacitance 0 50 100 150 200 250 0246810 v ds - drain-to-source voltage (v) 5 v v gs = 10 thru 7 v - drain current (a) i d 6 v 4 v 0 50 100 150 200 250 0 153045607590 - transconductance (s) g fs t c = - 55 c 25 c 125 c i d - drain current (a) 0 2000 4000 6000 8000 10000 0 8 16 24 32 40 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 50 100 150 200 250 01234567 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.001 0.002 0.003 0.004 0.005 0 20 40 60 80 100 120 i d - drain current (a) v gs = 10 v - on-resistance ( ) r ds(on) 0 4 8 12 16 20 0 50 100 150 200 250 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 30 v i d = 85 a
www.vishay.com 4 document number: 72077 s-80108-rev. e, 21-jan-08 vishay siliconix sum110n04-04 typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature avalanche current vs. time 0.0 0.4 0.8 1.2 1.6 2.0 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) v gs = 10 v i d = 30 a r ds(on) - on-resistance (normalized) t in (s) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) at t a = 150 c 100 1 0.0001 i av (a) at t a = 25 c source-drain diode forward voltage drain source breakdown vs. junction temperature v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c 0 40 44 48 52 56 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) (v) v (br)dss i d = 1 ma
document number: 72077 s-80108-rev. e, 21-jan-08 www.vishay.com 5 vishay siliconix sum110n04-04 thermal ratings vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72077. maximum avalanche and drain current vs. case temperature 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - ambient temper ature (c) - drain current (a) i d safe operating area 1000 10 0.1 1 10 100 limited by r ds(on) * 0.1 100 t c = 25 c single pulse - drain current (a) i d 1 ms 10 ms 100 ms dc 10 s 100 s 1 v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified normalized thermal transient impedance, junction-to-case square wave pulse duration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normalized eff ective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
